Facilities

Dry Helium 3 Refrigerator 1 (Niki Glass, ~ 300 mK) can be cooled down to its base temperature within one day and is capable of maintaining a stable temperature of 340 mK for up to 24 hours with the terahertz window open.

Dry Helium 3 Refrigerator 2 (Niki Glass, ~ 300 mK) is capable of maintaining a stable temperature of 340 mK for up to 3 days with the terahertz window open.

VG Semicon V-80HI is a molecular beam epitaxy (MBE) system for the growth of III-V compound semiconductors, equipped with Group-III sources (Ga, Al, In), a Group-V source (As), and dopants (Si, Be). Using this system, we fabricate semiconductor superlattice structures and related heterostructures.

Riber 23 is one of two MBE system in our group. This is equipped with two large cryopumps (CT-10) and is dedicated for growing high-mobility heterostructures. Therefore, the sources in this machine are only Ga, Al, In, As and Si. Our goal is to fabricate 2D electron systems with ultra-high mobility on the order of 10,000,000 cm²/Vs.

Thermal evaporators are used to deposit metal films by thermal heating. These are equipped with a film thickness monitor. Therefore, we can deposit metal films with thickness of angstrom levels. We have two evaporators; one for Schottky contacts and the other for Ohmic contacts.

We can evaporate metals such as gold, Cr, and Ti by irradiating the electron beam on such metal targets. This EB evaporator is equipped with a cryopump. Furthermore, this machine is equipped with the substrate tilting system, which can fabricate ultrasmall metal junctions by the shadow evaporation technique.

Standard mask aligner for photolithography (manufactured by SUSS MicroTec, Germany). Ultraviolet light with a wavelength of 400 nm is used to transfer the desired micro-pattern onto the sample. This system is installed in a shared cleanroom space and is available to users from other laboratories upon request.

This is a Fourier transform infrared spectrometers (FTIR) that covers an exceptionally wide wavenumber range from 10 cm⁻¹ to 15,000 cm⁻¹ by using various beam splitters such as Mylar and KBr. A key feature is that it supports both rapid-scan and step-scan mirror operation. In our laboratory, it is used to measure the photocurrent of quantum semiconductors.

An analytical instrument that uses the Raman effect (a light-scattering phenomenon arising from light–matter interaction) to perform qualitative and quantitative analysis of compounds and to characterize crystal structures. In particular, employing a laser light source with high intensity and excellent monochromaticity enables high-sensitivity measurements.

A wire bonder is a system for wiring microfabricated semiconductor devices. It supports Au and Al wires. In our laboratory, we mainly use it to wire semiconductor devices to ceramic packages.

The MILA-5000Z is a annealing furnace for rapid thermal annealing (RTA). By maintaining an Ar atmosphere in the sample chamber, it enables annealing while preventing sample oxidation. In our laboratory, it is used to form ohmic contacts.

The B1500A supports I-V, C-V, and fast pulsed I-V measurements. In our laboratory, combined with a cryostat and a temperature controller, it is used to study the temperature dependence of electrical conduction in quantum semiconductors.

The HL5500PC is a hall effect system for high-precision measurement of semiconductor resistivity, carrier concentration, and mobility. In our laboratory, we use it to characterize crystal-grown samples.

In addition to the equipment listed above, we also use the shared cleanroom facilities in the IIS Main Building and the CCR building. These facilities provide essential microfabrication tools and niche, highly specialized instruments, enabling rapid realization of desired device structures.